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Wide-range light emission of zinc-induced grown silicon oxide nanowires
New Phys.: Sae Mulli
Published online April 15, 2019;
© 2019 New Physics: Sae Mulli.

Jong-Hwan Yoon*

Department of Physics, College of Natural Sciences, Kangwon National University, Gangwondeahak-gil, Chucheon, Gangwon-do 24341, Korea
Received March 30, 2019; Revised April 1, 2019; Accepted April 15, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this work, we report the wide-range light emission of silicon oxide(SiOx) nanowires formed by using Zn as a catalyst. The SiOx nanowires were formed by exposing the Zn film formed on the Si substrate to silicon and oxygen plasma at a low temperature of about 380 ℃, and then the nanowires were annealed at a high temperature of 1100 ℃. The resultant SiOx nanowires exhibited a Photoluminescence spectrum with a wavelength range of about 350 to 900 nm, This was understood to resul
Keywords: Silicon oxide nanowire, Zinc oxide, Silicon nanocrystal, Wide-range light emission

January 2020, 70 (1)
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