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Comparison of the Electrical Characteristics of a Resistive Random Access Memory (RRAM) Device According to the Type of Metal Oxide
New Phys.: Sae Mulli 2019; 69: 612~616
Published online June 28, 2019;
© 2019 New Physics: Sae Mulli.

Hong Chang KIM1, SukYeop CHUN1, GaYeong KIM1, JaeHun JEONG1, YeongSoo HA1, JinWoo PARK1, JuneHee PARK1, MoonGyu JANG2*

1School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
2Research Institution of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea
Correspondence to:
Received March 21, 2019; Revised April 30, 2019; Accepted May 2, 2019.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
A simulation was carried out to analyze the characteristics of a resistive random access memory (RRAM) device having a metal-insulator-metal (MIM) pattern and the results were compared with the experimental data. In the study, HfO$_2$, TiO$_2$, and Ta$_2$O$_5$ were commonly used as an insulator, and platinum was used as an electrode to form the RRAM device. The variations in the current characteristics of each RRAM device with variables such as the thickness of the insulator, the trap concentration, and the trap depth through the constructed device were compared. In summary, we could see that the thinner the insulator was, the smaller the transition voltage was, and the greater the current density was. Thus, we could deduce that the resistance had decreased. In addition, when comparing the three materials used as the insulator, we were able to verify that Ta$_2$O$_5$ had better properties than the other materials.
PACS numbers: 85.30.-z, 73.40.Rw, 24.10.Lx
Keywords: RRAM, HfO2, TiO2, Ta2O5, Current Density

January 2020, 70 (1)
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