Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2020; 70: 119-124
Published online February 28, 2020 https://doi.org/10.3938/NPSM.70.119
Copyright © New Physics: Sae Mulli.
Jihyun KIM, Jeongsub LEE, Kimin HONG*
Department of Physics, Chungnam National University, Daejeon 34134, Korea
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
We electroplated cobalt thin films and separated them from the electrodes. The cobalt thin films were converted to bismuth- telluride films by using a galvanic displacement reaction. The bismuth-telluride films obtained from the cobalt exhibited significant differences in morphology and electrical resistivity. The bismuth-telluride films fabricated from cobalt plated with a pure electrolyte had a polycrystalline amorphous structure and low resistivity. However, the bismuth-telluride films fabricated from cobalt plated with an additive showed significantly large resistivities. The increase in the resistivity can be attributed to the changes in the crystalline structure, which is caused by the additive during the electroplating process.
Keywords: Cobalt thin film, Bismuth-telluride film, Electroplating, Electrical resistivity, Grain size