search for




 

https://doi.org/10.3938/NPSM.70.143
Horizontally Grown Tin-doped Indium-Oxide Nanowires
New Phys.: Sae Mulli 2020; 70: 143~147
Published online February 28, 2020;  https://doi.org/10.3938/NPSM.70.143
© 2020 New Physics: Sae Mulli.

Jinjoo JUNG, Do-Hyung KIM*

Nano Applied Physics Laboratory (NAPL), Department of Physics, Kyungpook National University, Daegu 41566, Korea
Correspondence to: kimdh@knu.ac.kr
Received December 9, 2019; Revised January 7, 2020; Accepted January 9, 2020.
cc This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Controlling the growth of nanowires and assembling them on planar substrates is of enormous importance for nanoscale device applications using the bottom-up approach. The tin-doped indium-oxide (ITO) nanowires were grown via direct thermal-chemical vapor deposition without the use of a pre-deposited catalyst. Growth was initiated by the formation of a Sn droplet that acted as a catalyst for ITO nanowire growth. With increasing growth time, the ITO nanowires grew horizontally in the early stages and then showed a horizontal-to-vertical growth mode transition. By reducing the rate of growth, we were able to obtain horizontally grown ITO nanowires without vertically grown ones. This is due to the horizontal growth period being increased by extending the transition time to vertical growth by reducing the growth rate. These results not only give important implications for the horizontal growth of other nanowires, but also point to potential applications in nanowire devices.
PACS numbers: 81.05.Y
Keywords: Self-catalyst, ITO nanowires, Morphology


March 2020, 70 (3)
  • Scopus
  • CrossMark