Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2020; 70: 315-321
Published online April 29, 2020 https://doi.org/10.3938/NPSM.70.315
Copyright © New Physics: Sae Mulli.
Kyoung Hwa KIM1, Gang Seok LEE1, Hyung Soo AHN1*, Injun JEON2, Chae Ryong CHO2, Sang chil LEE3, Suck-Whan KIM4
1Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In the preparation of a vertical blue light-emitting diode (LED) whose conventional substrate had been removed, a previously developed method based on mixed-source hydride vapor phase epitaxy (HVPE) was used to grow the epilayers, including a thick Si-doped GaN (GaN:Si) layer and an AlGaN/GaN double-heterostructure (DH). The thick GaN:Si layer was grown like a bulk material to minimize the effect of threading dislocations (TDs) formed during the epilayer growth. The AlGaN/GaN DH was then grown on the GaN:Si layer, and the dislocation density in both the AlGaN/GaN DH and the GaN:Si layer was investigated by using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). Furthermore, by using the thick GaN:Si epilayer like a bulk material as both a buffer layer and a new substrate for the vertical LED, we succeeded in fabricating a vertical blue LED by using mixed-source HVPE.
Keywords: GaN, AlGaN, threating dislocation, vertical-type blue LED, mixed-source hydride vapor phase epitaxy