npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Phys.: Sae Mulli 2020; 70: 315-321

Published online April 29, 2020 https://doi.org/10.3938/NPSM.70.315

Copyright © New Physics: Sae Mulli.

Characterization of Epilayers in Vertical Light-Emitting Diode Grown by Mixed-Source Hydride Vapor Phase Epitaxy

Kyoung Hwa KIM1, Gang Seok LEE1, Hyung Soo AHN1*, Injun JEON2, Chae Ryong CHO2, Sang chil LEE3, Suck-Whan KIM4

1Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

2Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University, Busan 46241, Korea
3Faculty of Science Education, Jeju National University, Jeju 63243, Korea
4Department of Physics, Andong National University, Andong 36729, Korea

Correspondence to:ahnhs@kmou.ac.kr

Received: December 5, 2019; Revised: February 4, 2020; Accepted: March 3, 2020

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In the preparation of a vertical blue light-emitting diode (LED) whose conventional substrate had been removed, a previously developed method based on mixed-source hydride vapor phase epitaxy (HVPE) was used to grow the epilayers, including a thick Si-doped GaN (GaN:Si) layer and an AlGaN/GaN double-heterostructure (DH). The thick GaN:Si layer was grown like a bulk material to minimize the effect of threading dislocations (TDs) formed during the epilayer growth. The AlGaN/GaN DH was then grown on the GaN:Si layer, and the dislocation density in both the AlGaN/GaN DH and the GaN:Si layer was investigated by using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). Furthermore, by using the thick GaN:Si epilayer like a bulk material as both a buffer layer and a new substrate for the vertical LED, we succeeded in fabricating a vertical blue LED by using mixed-source HVPE.

Keywords: GaN, AlGaN, threating dislocation, vertical-type blue LED, mixed-source hydride vapor phase epitaxy

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