npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
Qrcode

Article

Research Paper

New Phys.: Sae Mulli 2020; 70: 709-714

Published online September 29, 2020 https://doi.org/10.3938/NPSM.70.709

Copyright © New Physics: Sae Mulli.

Hydrogen Exodiffusion of Hydrogenated Amorphous Silicon Using High Sensitivity Thermal Desorption Spectroscopy

Ohmin KWON, Jae Ryeong JO, Ka-Hyun KIM*

Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Korea

Correspondence to:kahyunkim@cbnu.ac.kr

Received: July 17, 2020; Revised: August 7, 2020; Accepted: August 7, 2020

Abstract

We address hydrogen exodiffusion of hydrogenated amorphous silicon thin films by using thermal desorption spectroscopy. Amorphous silicon has a disordered atomic structure and consists of dangling bonds, which work as electronically active defects. These defects can be passivated by hydrogen, and the material is called hydrogenated amorphous silicon.~Hydrogen exodiffusion provides information on Si-H bonding and the microstructure of the material.~In this work, we fabricated a series of hydrogenated amorphous silicon thin films of different thicknesses and analyzed the Si-H bonding and the microstructure of the films by using hydrogen exodiffusion. In particular, we observed that the 10-nm thin film showed porous microstructure because the film was still in island/channeling stage of film deposition at initial moments, which is premature for uniform film growth. A complementary analysis using Fourier-transform infrared spectroscopy gave consistent results.

Keywords: Amorphous silicon, Microstructure of thin film, Hydrogen bonds

Stats or Metrics

Share this article on :

Related articles in NPSM