Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2020; 70: 709-714
Published online September 29, 2020 https://doi.org/10.3938/NPSM.70.709
Copyright © New Physics: Sae Mulli.
Ohmin KWON, Jae Ryeong JO, Ka-Hyun KIM*
Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Korea
We address hydrogen exodiffusion of hydrogenated amorphous silicon thin films by using thermal desorption spectroscopy. Amorphous silicon has a disordered atomic structure and consists of dangling bonds, which work as electronically active defects. These defects can be passivated by hydrogen, and the material is called hydrogenated amorphous silicon.~Hydrogen exodiffusion provides information on Si-H bonding and the microstructure of the material.~In this work, we fabricated a series of hydrogenated amorphous silicon thin films of different thicknesses and analyzed the Si-H bonding and the microstructure of the films by using hydrogen exodiffusion. In particular, we observed that the 10-nm thin film showed porous microstructure because the film was still in island/channeling stage of film deposition at initial moments, which is premature for uniform film growth. A complementary analysis using Fourier-transform infrared spectroscopy gave consistent results.
Keywords: Amorphous silicon, Microstructure of thin film, Hydrogen bonds