npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Phys.: Sae Mulli 2020; 70: 738-744

Published online September 29, 2020 https://doi.org/10.3938/NPSM.70.738

Copyright © New Physics: Sae Mulli.

Growth Mechanism and Characterization of AlN Microspheres by HVPE Method

Kyoung Hwa KIM1, Jung Hyun PARK1, Hyung Soo AHN*1, Min YANG2, Sam Nyung YI2, Injun JEON3, Chae Ryong CHO3, Hunsoo JEON4

1Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

2Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University, Busan 4624, Korea
3Power Semiconductor Commercialization Center, Busan Techno Park, Busan 46239, Korea
4Department of Physics, Andong National University, Andong 36729, Korea

Correspondence to:ahnhs@kmou.ac.kr

Received: May 27, 2020; Revised: July 21, 2020; Accepted: July 22, 2020

Abstract

An AlN microsphere was grown by using a mixed-source hydride vapor phase epitaxy (HVPE) method a reactor and combining the source with the growth regions and a graphite boat prefilled with the mixed source (Ga+Al) in the source region. The custom-designed reactor was designed to minimize reactions between quartz and AlCl vapor species and to reduce the response distance for synthesis for neighboring source and growth zones at a high source-zone temperature of 1150$^{\circ}$C. Field-emission scanning electron microscopy (FE;SEM), electron-energy dispersive spectroscopy (EDS), and field-emission transmission electron microscopy (FE;TEM) were used in order to investigate the characteristics of the AlN microsphere. We discuss the role of Ga in the mixed source in the AlN microsphere growth process and the results of an investigation of the growth mechanism of the AlN microsphere.

Keywords: AlN microspheres, Mixed-source HVPE, micro-puddles, Cubic AlN

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