npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2020; 70: 914-919

Published online November 30, 2020

Copyright © New Physics: Sae Mulli.

Fabrication of Epitaxial Cu$_{2}$O (111) Films from Cu(111) thin Films by Rapid Thermal Oxidation

Miyeon CHEON1, Yousil LEE1, Sujae KIM1, Se Young jeong2,3*

1Crystal Bank Research Institute, Pusan National University, Busan 46241, Korea

2Dept. of Cogno-Mechatronics Engineering, Pusan National University, Busan 46241, Korea
3Dept. of Optics and Mechatronics Engineering, Pusan National University, Busan 46241, Korea


Received: August 11, 2020; Revised: October 7, 2020; Accepted: October 15, 2020


Due to the energy gaps of copper from 2.1 to 2.7 eV, its high light absorption, its nontoxicity and its abundance on the earth, Cu$_{2}$O is an attractive material for use in various areas such as photovoltaic power generation, photocatalytic reactions, water photolysis, nonlinear optics, and gas sensing. Many researches efforts are being conducted to obtain high-quality Cu$_{2}$O thin films. In this study, high-quality, epitaxial Cu$_{2}$O (111) thin films were obtained via a relatively simple method, rapid thermal processes at high temperature of RF sputtered Cu (111) thin film on a sapphire substrate. XRD, SEM and UV-Vis spectroscopy measurements confirmed the high crystallinity of the Cu$_{2}$O (111) thin film oxidized for 30 minutes at a temperature of 800 $^{\circ}$C under an atmosphere of argon with 3 ppm of oxygen. Also, because of the high crystal-quality of the Cu$_{2}$O (111) thin films, blue and indigo energy gaps at room temperature were obtained from the absorption coefficient $\alpha$. The obtained energy band gaps are consistent with the theoretical values obtained from Cu$_{2}$O bulk structures.

Keywords: Cuprous oxide thin film, Epitaxial, Cu thin film, Rapid thermal annealing, Oxide thin film, Optical properties, Energy band gap

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