npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2020; 70: 1059-1066

Published online December 31, 2020

Copyright © New Physics: Sae Mulli.

Pixel Design Study of a CMOS Monolithic Active Pixel Sensor for the Charge Collection time

Sanghyeon LEE, In-Kwon YOO*

Department of Physics, Pusan National University, Busan 46241, Korea


Received: September 1, 2020; Revised: October 26, 2020; Accepted: October 26, 2020


A new silicon chip (INVESTIGATOR) manufactured for R\&D purposes has 134 mini-matrices with various pixel designs. Each matrix consists of 8 $\times$ 8 pixels, which put out 64 analogue signals at 65 MHz. The silicon pixel design is based on the newest technology of the complementary metal-oxide-semiconductor (CMOS) monolithic active pixel sensor (MAPS), which integrates the silicon sensor and the read-out circuitry in a pixel. The MAPS has advantages of low power consumption, high granularity of a pixel, and fast read-out. In this paper, the charge collection time for different pixel designs and reverse bias voltages is studied by using the INVESTIGATOR. The charge collection time is estimated by fitting the waveform for changing pixel pitch, reverse bias voltage, diameter of collection n-well diode, and spacing. Based on these results, we discuss the dependence of the relative depletion volume and the charge collection time on the pixel geometry.

Keywords: Silicon pixel detector, Monolithic active pixel sensor, Charge collection time


Fig. 1.

The 2-dimensional distributions and their projection plots of the amplitude and the charge collection time of the seed signals for pixel pitches of 20 $\upmu$m(a) and 30 $\upmu$m(b) with $\mathrm{V}_{\mathrm{BB}} = 0$ V, 3 $\mu$m the n-well size and $1 \mu$m of spacing.

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