npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2021; 71: 218-224

Published online March 31, 2021

Copyright © New Physics: Sae Mulli.

Strain Induced Topological Phase Transition in Si$_2$Bi$_2$ : First-Principles Study

Dameul JEONG, Seungwoo YOO, Junyeop JEON, Seung jun LEE, Young-Kyun KWON*

Department of physics, Kyung Hee University, Seoul 02447, Korea


Received: January 25, 2021; Revised: February 2, 2021; Accepted: February 2, 2021


We studied the electronic structure of Si$_2$Bi$_2$ through a first-principles calculation based on the density functional theory. Si$_2$Bi$_2$, a van der Waals layered structure, which possesses an in-plane $C_3$ rotational and time-reversal symmetries as well as inversion, exhibits metallic characteristics in equilibrium. Intriguingly, its electronic band structure reveals Dirac cones existing near the Fermi level. In addition, we observed that Si$_2$Bi$_2$ could undergo a phase transition from metallic to topological insulating phases due to in-plane compressive strains, either uniaxial or biaxial. In particular, its band structure evolution under the uniaxial compressive strain along the zigzag direction revealed that a band inversion had occurred. Our hybrid Wannier charge center calculation confirmed that this material, indeed, becomes a topological insulator. Finally, we constructed its topological phase diagram in the parameter space of the in-plane strain fields, which revealed how to control the in-plane strain to realize the topologically different phases of Si$_2$Bi$_2$.

Keywords: Layered materials, Density functional theory, Electronic structures, Topological phase transition, In-plane strain

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