Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2021; 71: 427-432
Published online May 31, 2021 https://doi.org/10.3938/NPSM.71.427
Copyright © New Physics: Sae Mulli.
Chang-Duk KIM*, Hyeong-Rag LEE
Department of Physics, Kyungpook National University, Daegu 41566, Korea
Owing to its high thermal stability, mechanical and chemical stability, and good photoelectric properties, silicon carbide (SiC) is currently receiving attention as a photocatalyst for nonmetallic semiconductor materials in various applications. In this research, graphite was synthesized on the surface of SiC particles via thermal chemical vapor deposition (thermal-CVD) with the intention of increasing the utility of SiC as a photocatalyst. The excellent properties of the SiC-graphite (SCG) produced were confirmed through various analyses. Synthesis of SCG was undertaken using various synthesis temperatures (800°C, 900°C, 1000°C, and 1100°C) and synthesis times (30, 60, 90, and 120 s). The research demonstrated that graphite could be formed on the SiC surface, thus expanding the areas in which SiC and C materials can be applied.
Keywords: Graphite, Silicon carbide, Thermal chemical vapor deposition, Powder, Semiconductor