npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2021; 71: 427-432

Published online May 31, 2021

Copyright © New Physics: Sae Mulli.

Synthesis of Graphite on SiC Particles by Using the Thermal-Chemical Vapor-Deposition Method with and It’s Dependence on Temperature and Time

Chang-Duk KIM*, Hyeong-Rag LEE

Department of Physics, Kyungpook National University, Daegu 41566, Korea


Received: January 7, 2021; Revised: February 23, 2021; Accepted: March 3, 2021


Owing to its high thermal stability, mechanical and chemical stability, and good photoelectric properties, silicon carbide (SiC) is currently receiving attention as a photocatalyst for nonmetallic semiconductor materials in various applications. In this research, graphite was synthesized on the surface of SiC particles via thermal chemical vapor deposition (thermal-CVD) with the intention of increasing the utility of SiC as a photocatalyst. The excellent properties of the SiC-graphite (SCG) produced were confirmed through various analyses. Synthesis of SCG was undertaken using various synthesis temperatures (800°C, 900°C, 1000°C, and 1100°C) and synthesis times (30, 60, 90, and 120 s). The research demonstrated that graphite could be formed on the SiC surface, thus expanding the areas in which SiC and C materials can be applied.

Keywords: Graphite, Silicon carbide, Thermal chemical vapor deposition, Powder, Semiconductor

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