npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2021; 71: 433-438

Published online May 31, 2021

Copyright © New Physics: Sae Mulli.

Photoluminescence of Amorphous Carbon Nitride (a-C:N) thin Films Grown by Facing Target Sputtering Method

Hong Tak KIM, Hyeong-Rag LEE, Sung-Youp LEE*

Department of Physics, Kyungpook National University, Daegu 41566, Korea


Received: January 7, 2021; Revised: February 27, 2021; Accepted: March 2, 2021


In this study, amorphous carbon nitride (a-C:N) thin films were deposited on glass substrates by using a facing target sputtering technique, and the effects of growth temperature were investigated. The deposition rate of the films gradually increased from 1.6 nm/min to 5 nm/min with increasing growth temperature. Emission peaks in the PL spectra of a-C:N films were found at 2.6 eV (green), 3.0 eV (blue), and 3.2 eV (UV). The blue and the UV emissions exhibited an inverse relationship with increasing growth temperature. The ratio of [N]/[C+N] increased from 11% to 15% with increasing to growth temperatures, and this implied an increase of C-N bonding in the films. As the growth temperature was increased, double-bonded nitrogen (N$_{d}$, =N-) and triple-bonded nitrogen (N$_{t}$, -N$<$) showed an inverse relationship, and the ratio of [N$_{t}$]/[N$_{d}$ + N$_{t}$] increased from 80% to 93%. This tendency was similar to the relationship between the blue and the UV emissions according to growth temperature. Thus, the ratio of N$_{t}$ and the intensity of UV emission are thought to be closely related, and these changes are thought to play a major role in determining the optoelectronic properties of the films.

Keywords: Amorphous carbon nitride, Facing target sputtering, Photoluminescence

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