npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Phys.: Sae Mulli 2021; 71: 838-841

Published online October 29, 2021 https://doi.org/10.3938/NPSM.71.838

Copyright © New Physics: Sae Mulli.

Raman Scattering Property of Silicon Nanowires with Porous Surface

Jungkil KIM*

Department of Physics, Jeju National University, Jeju 63243, Korea

Correspondence to:jungkil@jejunu.ac.kr

Received: August 12, 2021; Revised: September 13, 2021; Accepted: September 23, 2021

Abstract

The semiconductor nanostructure has attracted much attention due to its unique physical properties and high potential for applications to advanced devices. In particular, silicon nanostructures have been explored to prepare novel structures and to characterize their electrical and optical properties. In this research, porous structures were fabricated on the surfaces of silicon nanowires and a their of Raman scattering properties were characterized. Silicon nanowires were fabricated by using metal-assisted etching. In that method, a noble metal is utilized as a catalyst to etch the surface of a silicon wafer in a mixture of HF, H$_{2}$O$_{2}$, and H$_{2}$O. During the etching process, a porous surface with a nano meter size can be generated by controlling the volume ratio of H$_{2}$O$_{2}$. In addition, the density of pores is sensitive to the volume ratio of H$_{2}$O$_{2}$. The Raman scattering properties were systematically characterized by controlling the density of pores, and silicon nanowires with smooth surfaces were found to exhibit a Raman peak at 520 cm$^{-1}$, which is consistent with that of bulk silicon. On the other hand, the porous silicon nanowires showed red shifts of the Raman peaks.

Keywords: Porous Si, Raman scattering, Metal-assisted etching

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