npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2004; 48: 362-366

Published online April 1, 2004

Copyright © New Physics: Sae Mulli.

Investigation ans Analysis of the PL Characteristics of Porous Silicon at Low Temperatures

Choon-Woo LEE, Ki-Won LEE*, Shin-Ho YANG, Seon-Hwa PARK, Sang-Kyu LEE, Young-You KIM

Department of Physics, Kongju National University, Kongju 314-701



We investigated the photoluminescence characteristics of porous silicon at low temperatures. The photoluminescence of porous silicon was found to consist of two components, a 733-nm and a 810-nm peak. The intensities of those peaks increased with rising temperature up to ~100 K, then, they decreased very gradually. These results were explained by considering the trapping levels in the silicon compound layer and the quantum confinement effect in the silicon nanocrystal core.

Keywords: Porous silicon, Luminescence mechanism, Temperature dependence, Photoluminescence


Keywords: 다공질규소, 발광모형, 온도의존, 광찬빛

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