We investigated the photoluminescence characteristics of porous silicon at low temperatures. The photoluminescence of porous silicon was found to consist of two components, a 733-nm and a 810-nm peak. The intensities of those peaks increased with rising temperature up to ~100 K, then, they decreased very gradually. These results were explained by considering the trapping levels in the silicon compound layer and the quantum confinement effect in the silicon nanocrystal core.

Keywords: Porous silicon, Luminescence mechanism, Temperature dependence, Photoluminescence

Keywords: 다공질규소, 발광모형, 온도의존, 광찬빛