Ex) Article Title, Author, Keywords
New Physics: Sae Mulli 2004; 49: 184-190
Published online August 1, 2004
Copyright © New Physics: Sae Mulli.
Yongmin KIM* and Hyunsik IM
Department of Semiconductor Science, Dongguk University, Seoul 100-715
We theoretically analyze the characteristics of the Г resonance as a function of the hydrostatic pressure. Charge accumulation in the emitter and the collector X states is taken into account. The pinning effect between the emitter AlAs X and the GaAs Г states is also considered in the high pressure region (>~6 kbar). The increased valley current is clearly demonstrated to be due to the non - resonant current through the X-states in the collector AlAs layer. We evaluate a new effective mass for the longitudinal X state of the AlAs quantum well and model the pressure dependence of the resonant bias position. The transfer - matrix method and self-consistent Schrodinger-Poisson calculations are used as the main modeling tools.
Keywords: GaAs/AlAs double barrier structure, Heterostructure, Resonant tunneling, Transfer matrix, Hydrostatic pressure, X-conduction band