npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
Qrcode

Article

Research Paper

New Physics: Sae Mulli 2004; 49: 184-190

Published online August 1, 2004

Copyright © New Physics: Sae Mulli.

Quantum Mechanical Analysis of Г-Resonant Tunneling in a GaAs/AlAs Double-Barrier Structure under Hydrostatic Pressure

Yongmin KIM* and Hyunsik IM

Department of Semiconductor Science, Dongguk University, Seoul 100-715

Correspondence to:sfcall@dongguk.edu

Abstract

We theoretically analyze the characteristics of the Г resonance as a function of the hydrostatic pressure. Charge accumulation in the emitter and the collector X states is taken into account. The pinning effect between the emitter AlAs X and the GaAs Г states is also considered in the high pressure region (>~6 kbar). The increased valley current is clearly demonstrated to be due to the non - resonant current through the X-states in the collector AlAs layer. We evaluate a new effective mass for the longitudinal X state of the AlAs quantum well and model the pressure dependence of the resonant bias position. The transfer - matrix method and self-consistent Schrodinger-Poisson calculations are used as the main modeling tools.

Keywords: GaAs/AlAs double barrier structure, Heterostructure, Resonant tunneling, Transfer matrix, Hydrostatic pressure, X-conduction band

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