npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Article

Research Paper

New Physics: Sae Mulli 2007; 54: 216-222

Published online March 31, 2007

Copyright © New Physics: Sae Mulli.

Growth Kinetics of Ni Thin Films Electrodeposited on n-Si(111)

J. D. LEE1,* B. Y. AHN1, S. I. KIM1, H. S. KIM1, S. Y. JEONG1, J. J. LEE1 and K. H. KIM1, S. J. YOUN2

1Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701
2Department of Physics Education and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701

Correspondence to:jdlee@gnu.ac.kr, hskim@gnu.ac.kr

Abstract

Nanocrystalline Ni ?lms were grown directly on n-Si(111) substrates without any bu?er layer by using pulsed electrodeposition in a non-aqueous NiCl2 + methanol solution. The structure of the energy band of the Ni2+/n-Si(111) interface in a 0.1-M NiCl2 electrolyte was investigated by using the cyclic voltammogram (CV) and the Mott-Schottky (MS) relation. The CV results indicated that the Ni2+/n-Si(111) interface showed a good diode behavior by forming a Schottky barrier. From the CV and the MS relation, the ?atband potential of the n-Si(111) substrate and the equilibrium redox potential of Ni2+ ions were -0.508 V and -0.294 V, respectively. We con?rmed that the average size of the Ni nanoparticles obtained by using pulsed electrodeposition depended on the frequency of the applied potential pulse. When the frequency was varied from 20 Hz to 900 Hz, the average size of the Ni nanoparticles varied in the range from 48 nm to 130 nm. The nucleation and growth kinetics during the initial stages of Ni2+/n-Si(111) interface formation, as studied by using current transients, were indicative of an 3-dimensional, instantaneous nucleation, followed by a di?usion-limited growth mode. 

Keywords: Ni thin ?lm, Electrodeposition, Si, Nucleation, Nanocrystallite

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