npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2010; 60: 505-510

Published online May 31, 2010

Copyright © New Physics: Sae Mulli.

Electronic Properties of the Pentanaly Alloy GaxIn1?xPySbzAs1?y?z Lattice-matched to GaSb

오원화합물 반도체 GaxIn1?xPySbzAs1?y?z의 전자적 특성

Kyu Rhee SHIM*

Department of Electro-physics, Kyonggi University, Suwon 443-760



The electronic band gaps and the lattice-matching conditions for the pentanary alloy GaxIn1?xPySbzAs1?y?z lattice-matched to GaSb in the mid-infrared (MIR) spectral region were calculated by using the universal tight binding method. The calculation suggested that the alloy GaxIn1?xPySbzAs1?y?z/GaSb in 0.1 ≤ Sb ≤ 0.2 was suitable for the MIR spectral region from 3 to 5 μm (i.e., band gaps of 0.41 eV ~ 0.25 eV). With increasing z from 0.09 to 0.21, the latticematching x and y regions became broader, and the band gap and the valence band maximum (VBM) also increased. This implies that the interface the between GaxIn1?xPySbzAs1?y?z and the GaSb is a type-I semiconductor. Our theoretical band gaps were compared with experimental band gap data for four samples of GaxIn1?xPySbzAs1?y?z/GaSb.

Keywords: Pentanary alloy Ga(x)InA(1-x)P(y)Sb(z)As(1-y-z), Midinfrared, Lattice matching condition, Universal tight binding method, Band gap

GaSb 기판에 격자 정합시킨 오원화합물 반도체 GaxIn1-xPySbzAs1-y-z의 격자정합조건과 에너지 밴드갭등 전자적 특성을 범용적밀접결합 방법을 이용하여 구하였다. 계산 결과 파장대가 3~5 μm (즉, 밴드갭이 0.41eV~0.25 eV)인 중적외선영역의 밴드갭은 주로 0.1 < Sb < 0.2 에서 형성되었다. Sb를 0.09 부터 0.21까지 0.02 씩 증가시켜 계산한 결과, Sb 가 증가 할 수록 GaSb에 격자정합 시킬 수 있는 x와 y의 범위가 넓어지며, 밴드갭과 가전자띠 최대값도 증가함을 알 수 있었다. 또한 중적외선영역의 GaxIn1-xPySbzAs1-y-z와 GaSb 기판 사이의 접합면에서는 제1형반도체가 됨을 알 수 있었다. 최근 결정성장된 네개의 샘플 GaxIn1-xPySbzAs1-y-z/GaSb 에 대한 밴드갭 실험치와 비교해 본 결과 잘 일치하였다.

Keywords: 오원화합물반도체, Ga(x)InA(1-x)P(y)Sb(z)As(1-y-z), MIR(midinfrared), 격자정합조건, UTB(universal tight binding), 밴드갭

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