npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Article

Research Paper

New Physics: Sae Mulli 2013; 63: 1213-1217

Published online November 29, 2013 https://doi.org/10.3938/NPSM.63.1213

Copyright © New Physics: Sae Mulli.

Effects of Silicon-oxide Layers on the Light-emission Characteristics of Si-nanocrystal Multilayers

다층 실리콘 나노결정의 광발광에 대한 이산화 실리콘 층의 효과

Jong-Hwan YOON*

Department of Physics, College of Natural Sciences, Kangwon National University, Chuncheon 200-701, Korea

Correspondence to:

jhyoon@kangwon.ac.kr

Received: August 1, 2013; Revised: August 26, 2013; Accepted: November 12, 2013

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this work, we have investigated the light emission characteristics of multilayered silicon nanocrystals produced by thermally annealing SiO$_2$/SiO$_{1.5}$/SiO$_2$ multilayered structures grown by using plasma-enhanced chemical vapor deposition (PECVD). The light emission intensity was shown to strongly depend on the SiO$_2$ layer's thickness. The emission intensity of the multilayered Si nanocrystals prepared by using a 3.5-nm-thick SiO$_2$ layer was found to be higher by a factor 20 than that of a single-layer sample of SiO$_{1.5}$ without the SiO$_2$ layer. The results are likely attributed to a limitation on the Si diffusion due to the two SiO$_2$ layers.

Keywords: Silicon nanocrystal, Silicon oxide, Multilayer structure, Light emission

본 연구에서는 플라즈마 화학기상 증착 (PECVD)에 의해 제조된 SiO2/SiO1.5/SiO2 구조의 다층 박막을 열처리하여 형성된 다층 Si 나노 결정의 발광 특성을 연구하였다. 발광 세기는 SiO2층의 두께에 강한 의존성을 갖고 있음을 관측하였으며, 두께 3.5 nm의 SiO2를 갖는 다층 박막으로부터 얻는 Si 나노 결정의 발광 세기는SiO1.5 단일층에 의한 Si 나노결정의 발광 세기에 비해 약 20배의 높은 발광 특성을 나타내었다. 이러한 결과는 두 SiO2 층에 의한 Si 원자의 확산 제한에 기인한 것으로 이해된다.

Keywords: Si 나노결정, 산화 실리콘, 다층 구조, 광발광

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