npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2014; 64: 512-517

Published online May 30, 2014

Copyright © New Physics: Sae Mulli.

Growth and Optical Properties of ZnTe Thin Films Formed by Using Pulsed Laser Deposition

Chang-Sun YOON*, Seung-Jae NAM

Department of Physics, Kunsan National University, Kunsan 573-701, Korea


Received: April 17, 2014; Revised: April 30, 2014; Accepted: April 30, 2014

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


ZnTe thin films were grown on glass substrates at various substrate temperatures ranging from 26 $^\circ$C to 300 $^\circ$C by using pulsed laser deposition. The effects of the substrate temperature on the structural and optical properties and on the surface morphology of the ZnTe thin films were investigated. X-ray diffraction and scanning electron microscope analysis showed that the ZnTe films grown at substrate temperatures above 260 $^\circ$C revealed good crystalline quality that was characterized by a  preferred (111) orientation with polycrystalline behavior. The optical energy gap of the ZnTe films, measured at room temperature, increased with increasing substrate temperature from 26 $^\circ$C to 300 $^\circ$C and approached the bulk value of 2.26 eV. The photoluminescence spectra of the ZnTe films exhibited a sharp band-edge emission near the absorption edge without a deep-level emission peak. Particularly, the Raman spectra showed the four multiphonon modes of the longitudinal optical (LO) phonon at room temperature, which indicates good crystalline quality.

Keywords: ZnTe thin films, Pulsed laser deposition, X-ray diffraction, Optical absorption, Raman scattering

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