npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Physics: Sae Mulli 2014; 64: 512-517

Published online May 30, 2014 https://doi.org/10.3938/NPSM.64.512

Copyright © New Physics: Sae Mulli.

Growth and Optical Properties of ZnTe Thin Films Formed by Using Pulsed Laser Deposition

Chang-Sun YOON*, Seung-Jae NAM

Department of Physics, Kunsan National University, Kunsan 573-701, Korea

Correspondence to:csyoon@kunsan.ac.kr

Received: April 17, 2014; Revised: April 30, 2014; Accepted: April 30, 2014

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

ZnTe thin films were grown on glass substrates at various substrate temperatures ranging from 26 $^\circ$C to 300 $^\circ$C by using pulsed laser deposition. The effects of the substrate temperature on the structural and optical properties and on the surface morphology of the ZnTe thin films were investigated. X-ray diffraction and scanning electron microscope analysis showed that the ZnTe films grown at substrate temperatures above 260 $^\circ$C revealed good crystalline quality that was characterized by a  preferred (111) orientation with polycrystalline behavior. The optical energy gap of the ZnTe films, measured at room temperature, increased with increasing substrate temperature from 26 $^\circ$C to 300 $^\circ$C and approached the bulk value of 2.26 eV. The photoluminescence spectra of the ZnTe films exhibited a sharp band-edge emission near the absorption edge without a deep-level emission peak. Particularly, the Raman spectra showed the four multiphonon modes of the longitudinal optical (LO) phonon at room temperature, which indicates good crystalline quality.

Keywords: ZnTe thin films, Pulsed laser deposition, X-ray diffraction, Optical absorption, Raman scattering

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