npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2014; 64: 682-686

Published online July 31, 2014

Copyright © New Physics: Sae Mulli.

Dielectric and p-type Characteristics of Li-doped ZnO Thin Films

Guojie LI, Byung Chun CHOI*

Department of Physics, Pukyong National University, Busan 608-737, Korea


Received: April 22, 2014; Revised: June 2, 2014; Accepted: June 10, 2014

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report the structural, dielectric and electronic properties of Zn$_{1-x}$Li$_{x}$O ($x$ = 0.1, 0.05, 0.10) thin films prepared on Pt(111)/Ti/SiO$_{2}$/Si substrates by using pulsed laser deposition (PLD). X-ray diffraction (XRD) analyses revealed that all of films had a single phase as the Zn-O bond length gradually increased with increasing Li content at first and then decreased after a certain threshold. 5-at% and 10-at% Li-doped ZnO thin films show p-type behavior based on Hall-effect measurements. The existence of defects, such as Li$_{i}$ (interstitial Li) and Li$_{Zn}$ (substitutional Li at the Zn site), should be considered in the host materials. The relationship between the defects and the Li concentration is consistent with the dielectric results. The stabilization of p-type thin films as to the behavior of defects is also discussed theoretically.

Keywords: ZnO, Thin films, PLD, p-type, Dielectric constant

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