npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Physics: Sae Mulli 2014; 64: 696-703

Published online July 31, 2014 https://doi.org/10.3938/NPSM.64.696

Copyright © New Physics: Sae Mulli.

Effects of Excessive Bi on the Structure and the Properties of Aurivillius Bi$_{5.25}$La$_{0.75}$Fe$_{2}$Ti$_{3}$O$_{18}$ Thin Films

Chinnambedu Murugesan RAGHAVAN1, Jin Won KIM1, Ji Ya CHOI1, Sang Su KIM*1, Jong-Woo KIM2

1 Department of Physics, Changwon National University, Changwon 641-773, Korea
2 Functional Ceramics Group, Korea Institute of Materials Science, Changwon 641-831, Korea

Correspondence to:sskim@changwon.ac.kr

Received: April 17, 2014; Revised: May 15, 2014; Accepted: May 15, 2014

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The effects of excessive Bi on the structural, electrical and multiferroic properties of the La-doped Bi$_{6}$Fe$_{2}$Ti$_{3}$O$_{18}$ (Bi$_{5.25}$La$_{0.75}$Fe$_{2}$Ti$_{3}$O$_{18}$) thin films prepared on Pt(111)/Ti/SiO$_{2}$/Si(100) substrates by using a chemical solution deposition method are reported. The structures of the thin films were studied by using X-ray diffraction, Raman scattering spectroscopy and scanning electron microscopy. From the experimental comparisons, a low electrical leakage current of 1.84 $\times$ 10$^{-5}$ A/cm$^{2}$ at 100 kV/cm and enhanced ferroelectric properties, such as a large remnant polarization (2$P_{r}$) of 10.5 $\mu$C/cm$^{2}$ and a low coercive field (2$E_{c}$) of 400 kV/cm at 485 kV/cm, were observed for the 5% Bi-excess La-doped Bi$_{6}$Fe$_{2}$Ti$_{3}$O$_{18}$ thin film. The formation of a stable bismuth layer-structured phase, a lower $c$-axis orientation, an optimum crystallinity and a dense microstructure with a smooth surface morphology correlate with the improved electrical and multiferroic properties of the 5% Bi-excessive Bi$_{6}$Fe$_{2}$Ti$_{3}$O$_{18 }$ thin film.

Keywords: Aurivillius La doped Bi$_{6}$Fe$_{2}$Ti$_{3}$O$_{18}$ thin film, Chemical solution deposition, Structure, Multiferroic properties

Figures

Fig. 1. Frequency dependent dielectric properties of the B0LFT, B5LFT, B10LFT and B20LFT thin films.

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