Collective Excitation of Plasmons in a n-Ge/SiO$_{2}$ Superlattice Under a Perturbing Electric Field

Sang Chil LEE; Hyung Soo AHN; Suck Whan KIM*

doi:10.3938/NPSM.65.221

Article

Research Paper

New Physics: Sae Mulli 2015; 65: 221-229

Published online March 31, 2015 https://doi.org/10.3938/NPSM.65.221

Collective Excitation of Plasmons in a n-Ge/SiO$_{2}$ Superlattice Under a Perturbing Electric Field

Sang Chil LEE¹, Hyung Soo AHN², Suck Whan KIM*³

¹ Faculty of Science Education, Jeju National University, Jeju 690-756, Korea
² Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
³ Department of Physics, Andong National University, Andong 760-749, Korea

Correspondence to:swkim@anu.ac.kr

Received: December 9, 2014; Revised: February 5, 2015; Accepted: February 11, 2015

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

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Abstract

In this paper, the density-density correlation function for an n-Ge/SiO$_{2}$ type-I superlattice with an infinite confining potential well and surfaces of different dielectric media under a perturbing electric field parallel to the superlattice axis is calculated. This includes intrasubband and intersubband transitions in a multiple quantum well (MQW) consisting of n-Ge quantum wells separated by a SiO$_{2}$ barrier, and the random-phase approximation is used. We also obtain the dispersion relations for the bulk and the surface subband states as functions of the electric field strength averaged over the quantum well and the momentum wavevector, respectively. Furthermore, we obtain the Raman intensities due to the bulk and the surface states of the intrasubband and the intersubband states as a function of the energy of the incident light.

Keywords: Type-I superlattice, Subband, Dispersion relation, Random phase approximation, Raman intensity