npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2015; 65: 221-229

Published online March 31, 2015

Copyright © New Physics: Sae Mulli.

Collective Excitation of Plasmons in a n-Ge/SiO$_{2}$ Superlattice Under a Perturbing Electric Field

Sang Chil LEE1, Hyung Soo AHN2, Suck Whan KIM*3

1 Faculty of Science Education, Jeju National University, Jeju 690-756, Korea
2 Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
3 Department of Physics, Andong National University, Andong 760-749, Korea


Received: December 9, 2014; Revised: February 5, 2015; Accepted: February 11, 2015

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper, the density-density correlation function for an n-Ge/SiO$_{2}$ type-I superlattice with an infinite confining potential well and surfaces of different dielectric media under a perturbing electric field parallel to the superlattice axis is calculated. This includes intrasubband and intersubband transitions in a multiple quantum well (MQW) consisting of n-Ge quantum wells separated by a SiO$_{2}$ barrier, and the random-phase approximation is used. We also obtain the dispersion relations for the bulk and the surface subband states as functions of the electric field strength averaged over the quantum well and the momentum wavevector, respectively. Furthermore, we obtain the Raman intensities due to the bulk and the surface states of the intrasubband and the intersubband states as a function of the energy of the incident light.

Keywords: Type-I superlattice, Subband, Dispersion relation, Random phase approximation, Raman intensity

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