Ex) Article Title, Author, Keywords
Ex) Article Title, Author, Keywords
New Physics: Sae Mulli 2015; 65: 311-316
Published online April 30, 2015 https://doi.org/10.3938/NPSM.65.311
Copyright © New Physics: Sae Mulli.
Chinnambedu Murugesan RAGHAVAN, Jin Won KIM, Ji Ya CHOI, Sang Su KIM*
Department of Physics, Changwon National University, Changwon 641-773, Korea
Correspondence to:sskim@changwon.ac.kr
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Aurivillius-phase six-layered Bi$_{7}$Fe$_{3}$Ti$_{3}$O$_{21}$ (BFTO21) and Nd-doped Bi$_{6.4}$Nd$_{0.6}$Fe$_{3}$Ti$_{3}$O$_{21}$ (BNdFTO21) thin films were prepared on Pt(111)/Ti/SiO$_{2}$/Si(100) substrates by using a chemical solution deposition method in order to investigate their structural, electrical, and multiferroic properties. Doping the Bi sites of the BFTO21 with Nd$^{3+}$-ions led to remarkable improvements in the electrical and the multiferroic properties. The electrical study of the BNdFTO21 thin film showed a low leakage current density of 4.38 $\times$ 10$^{-6}$ A/cm$^{2}$ at an applied electric field of 100 kV/cm, which was about one order of magnitude lower than that of the BFTO21 thin film. The ferroelectric $P-E$ hysteresis loop of the BNdFTO21 thin film exhibited a large remnant polarization (2$P_{r}$) of 24 $\mu$C/cm$^{2}$ and a low coercive electric field (2$E_{c}$) of 154 kV/cm at an applied electric field of 239 kV/cm. Furthermore, the magnetization and the coercive magnetic field that were observed for the BNdFTO21 thin film at room temperature were drastically enhanced compared to those observed for the BFTO21 thin film.
Keywords: Nd-doped Bi$_{7}$Fe$_{3}$Ti$_{3}$O$_{21}$, Chemical solution deposition, Electrical properties, Multiferroic properties