npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2015; 65: 441-444

Published online May 29, 2015

Copyright © New Physics: Sae Mulli.

Energy Level Calculation for a Cr$\mathbf{^{3+}}$ Paramagnetic Impurity Ion in a GaAs:Cr,In Single Crystal

Tae Ho YEOM*

Department of Laser and Optical Information Engineering, Cheongju University, Cheongju 360-764, Korea


Received: March 13, 2015; Accepted: April 21, 2015

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


The ground-state energy levels of the Cr$^{3+}$ paramagnetic impurity ion that substitutes at the Ga site in a GaAs:Cr,In single crystal were calculated for the case of a magnetic field B applied along the crystallographic principal axes. The Cr$^{3+}$ ion (effective spin S = 3/2) has four energy levels because of the Zeeman splitting that occurs when the magnetic field is applied. The energy level diagrams for the Cr$^{3+}$ ion were different for different directions of the magnetic field when the magnetic field was increased. The calculated zero-field splitting (ZFS) energy frequency of the Cr$^{3+}$ ion in a GaAs:Cr,In crystal for the $|\pm3/2\rangle \leftrightarrow |\pm1/2\rangle $ transitions was 6.8636 GHz.

Keywords: GaAs:Cr, In single crystal, EMR, Energy level

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