npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2016; 66: 1440-1443

Published online November 30, 2016

Copyright © New Physics: Sae Mulli.

Enhanced InN Solid Solubility in Pseudo-Binary InN-GaN (InGaN) Nanostructures

Hye-Won SEO*

Department of Physics, Jeju National University, Jeju 63243, Korea


Received: September 8, 2016; Revised: October 6, 2016; Accepted: October 14, 2016

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


We have studied the change in the Gibbs free energy during the formation of a pseudo-binary compound with InN-GaN nanostructures. The addition of a free energy term regarding the surface energy and the radius of curvature in the nanostructure leads to a modulation of the phase diagram for the corresponding bulk. We considered the actual parameters extracted from the InGaN system and found that the binodal and spinodal curves became closer with decreasing radius of the nanostructure; 1) the solid solubility of InN in GaN was promoted, which enhancement became more prominent at a higher growth temperature, and 2) the metastable region formed between the binodal and the spinodal curves became narrower, but the inhomogeneous region under the spinodal decomposition curves became slightly broader. We also found a critical minimum radius, which is inversely proportional to the growth temperature, for the InGaN nanostructures under equilibrium growth conditions. 

Keywords: InGaN, Phase separation, Miscibility gap, Solid solubility, Nanostructure

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