npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Physics: Sae Mulli 2017; 67: 41-45

Published online January 31, 2017 https://doi.org/10.3938/NPSM.67.41

Copyright © New Physics: Sae Mulli.

Facile Meniscus Dragging Depositions for Lateral Alignment of ZnO Nanowires

메니스커스 드래깅 증착법을 이용한 산화아연 나노선의 수평 정렬 연구

Dong Hun KANG1, Dong-Myeong SHIN2, Hyung Kook KIM*3, Yoon-Hwae HWANG†3

1 Department of Advanced Integrated Circuit, Pusan National University, Busan 46241, Korea
2 Research Center for Energy Convergence Technology, Pusan National University, Busan 46241, Korea
3 Department of Nanoenergy Engineering & BK21 PLUS Nanoconvergence Technology Division, Pusan National University, Busan 46241, Korea

Correspondence to:*hkkim@pusan.ac.kr, †yhwang@pusan.ac.kr

Received: June 29, 2016; Revised: July 28, 2016; Accepted: November 5, 2016

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

We fabricated laterally-aligned ZnO nanowires by using the meniscus dragging deposition (MDD) technique under various deposition conditions. The ZnO nanowire alignment exhibits a linear response with increasing number of deposition cycles, indicating that the deposited ZnO nanowires were tightly fixed on the substrate and showing that the degree of alignment was constant at $\sim$65%. Also, we could regulate the density and the degree of alignment by controlling the deposition angle, temperature and speed. The MDD technique for fabricating laterally-aligned ZnO nanowires can be useful for synthesizing functional materials in numerous electronic and optoelectronic devices, including field-effect transistors, nanogenerators and ultraviolet sensors.

Keywords: ZnO, Nanowire, Lateral alignment, Meniscus dragging deposition (MDD)

본 연구에서는 메니스커스 드래깅 증착법 (meniscus dragging deposition, MDD)을 이용해 다양한 분위기에서 산화아연 나노선을 수평 방향으로 정렬하였다. 산화아연 나노선의 수평 정렬정도는 증착 횟수에 선형적으로 비례하였다. 기판 위에 한번 증착된 나노선은 새로운 드래깅 증착에 큰 영향을 받지 않으며, 새로운 나노선 증착 시에는 항상 일정한 비율 ($\sim$65%)로 정렬된 특성을 보여주었다. 또한, 증착 각도, 증착 온도 및 증착 속도 등을 조절하여 산화아연 나노선의 정렬 정도 및 정렬 밀도를 조절할 수 있었다. 본 연구에서 산화아연 나노선의 수평 정렬을 위해 사용한 메니스커스 드래깅 증착법은 전계효과 트랜지스터, 나노발전기 및 자외선 센서 등의 다양한 대면적 전자기기와 광전자기기의 제작에 쉽게 활용될 수 있을 것으로 기대한다.

Keywords: ZnO, 나노선, 수평 정렬, 메니스커스 드래깅 증착법 (MDD)

Erratum: Facile Meniscus Dragging Depositions for Lateral Alignment of ZnO Nanowires

Dong Hun KANG1, Dong-Myeong SHIN2, Hyung Kook KIM*3, Yoon-Hwae HWANG†3

1 Department of Advanced Integrated Circuit, Pusan National University, Busan 46241, Korea

2 Research Center for Energy Convergence Technology, Pusan National University, Busan 46241, Korea

3 Department of Nanoenergy Engineering & BK21 PLUS Nanoconvergence Technology Division, Pusan National University, Busan 46241, Korea

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