npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Article

Research Paper

New Phys.: Sae Mulli 2017; 67: 1291-1296

Published online November 30, 2017 https://doi.org/10.3938/NPSM.67.1291

Copyright © New Physics: Sae Mulli.

Effect of Indium Concentration on the Morphological and Photoluminescence Properties of In-doped ZnO Nanorods

Fan ZHANG1, Hong Seung KIM*1, Nak Won JANG2

1 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 Division of Electrical and Electronics Engineering, Korea Maritime and Ocean University, Busan 49112, Korea 

Correspondence to:hongseung@kmou.ac.kr

Received: August 11, 2017; Revised: September 27, 2017; Accepted: September 29, 2017

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In-doped ZnO nanorods with various indium concentrations were grown on silicon substrates with a ZnO seed layer by using the hydrothermal method. Although well-aligned undoped ZnO nanorods were synthesized and crystallized in a hexagonal structure with good quality, once an indium source had been introduced, the diameter of the In-doped ZnO nanorod showed a linear increase with one exception: a decrease in the diameter of the In-doped ZnO nanorod with 5 wt.% indium. Correspondingly, the crystalline quality and the optical properties of In-doped ZnO nanorods improved with increasing indium concentration. In conclusion, the indium-doping concentration plays an important role in determining morphology and the photoluminescence properties of In-doped ZnO nanorods. The possible growth mechanism, which is affected by the indium doping at different concentration, is discussed. 

Keywords: Nanorod, In-doped ZnO, Hydrothermal method, Photoluminescence property

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