Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2017; 67: 1291-1296
Published online November 30, 2017 https://doi.org/10.3938/NPSM.67.1291
Copyright © New Physics: Sae Mulli.
Fan ZHANG1, Hong Seung KIM*1, Nak Won JANG2
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
In-doped ZnO nanorods with various indium concentrations were grown on silicon substrates with a ZnO seed layer by using the hydrothermal method. Although well-aligned undoped ZnO nanorods were synthesized and crystallized in a hexagonal structure with good quality, once an indium source had been introduced, the diameter of the In-doped ZnO nanorod showed a linear increase with one exception: a decrease in the diameter of the In-doped ZnO nanorod with 5 wt.% indium. Correspondingly, the crystalline quality and the optical properties of In-doped ZnO nanorods improved with increasing indium concentration. In conclusion, the indium-doping concentration plays an important role in determining morphology and the photoluminescence properties of In-doped ZnO nanorods. The possible growth mechanism, which is affected by the indium doping at different concentration, is discussed.
Keywords: Nanorod, In-doped ZnO, Hydrothermal method, Photoluminescence property