npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2017; 67: 142-147

Published online February 28, 2017

Copyright © New Physics: Sae Mulli.

Theoretical Investigation of Plasmon Properties in a Multiple Quantum Well in a GaAs/Al$_x$Ga$_{1-x}$As Semiconductor Superlattice Under a Magnetic Field

Sang Chil LEE1, Hyung Soo AHN2, Suck Whan KIM*3

1 Faculty of Science Education, Jeju National University, Jeju 63243, Korea
2 Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
3 Department of Physics, Andong National University, Andong 36729, Korea


Received: September 8, 2016; Revised: September 29, 2016; Accepted: September 30, 2016

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


Extending a previous theoretical framework for the multiple-quantum-well (MQW) system in the GaAs/Al$_x$Ga$_{1-x}$As semiconductor superlattice, we obtained, on the basis of a simple model of a half-parabolic confining potential varying with the composition of the Al$_x$Ga$_{1-x}$As barrier layer, the density-density correlation function, including intrasubband and intersubband transitions, by using the random-phase approximationin under a magnetic field perpendicular to the axis of the superlattice. The dispersion energies for the surface and the bulk states were obtained as a function of compositional ratio of $x$ in the Al$_x$Ga$_{1-x}$As barrier layer and the magnetic field strength, respectively. The Raman intensities due to the bulk and the surface were also obtained for incoming light energy as a function of the compositional ratio $x$ and the magnetic field strength.       

Keywords: Multiple quantum well, Subband, Type-I superlattice, Random phase approximation, Density-density correlation function

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