Ex) Article Title, Author, Keywords
pISSN 0374-4914
eISSN 2289-0041
pISSN 0374-4914
eISSN 2289-0041
Ex) Article Title, Author, Keywords
New Physics: Sae Mulli 2017; 67: 654-658
Published online June 30, 2017 https://doi.org/10.3938/NPSM.67.654
Copyright © New Physics: Sae Mulli.
Vu Quoc VIET, Byeong June MIN, Heon-Jung KIM*
Department of Physics, Daegu University, Gyeongsan 38453, Korea
Correspondence to:hjkim76@daegu.ac.kr
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
The La$_{1-x}$Pr$_x$NiO$_3$ (LPNO) films were grown on SrTiO$_3$ (STO) substrates via the pulsed laser deposition (PLD) method. The influence of the concentration x on the microstructure and the electrical properties of the LPNO films was investigated. The LPNO films with different concentrations x from 0 to 0.3 were fabricated under an oxygen partial pressure of 100 mTorr at a substrate temperature of 750 $^{\circ}$C and an energy density of 1.0 J/cm$^2$. The textures, morphologies and electrical properties of the LPNO films were characterized by using X-ray diffraction, atomic force microscopy (AFM), and electrical resistivity measurements. The LPNO films were shown to be c-axis oriented, and the LPNO films with x = 0.2 and 0.3 exhibited an upturns at T = 40 K and 50 K, respectively.
Keywords: Thin films, Resistivity, PLD
