npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Physics: Sae Mulli 2017; 67: 654-658

Published online June 30, 2017

Copyright © New Physics: Sae Mulli.

Influence of Concentration X on the Microstructure and the Electrical Properties of La$_{1-x}$ Pr$_x$NiO$_3$ Thin Films

Vu Quoc VIET, Byeong June MIN, Heon-Jung KIM*

Department of Physics, Daegu University, Gyeongsan 38453, Korea


Received: November 30, 2016; Revised: February 21, 2017; Accepted: February 27, 2017

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


The La$_{1-x}$Pr$_x$NiO$_3$ (LPNO) films were grown on SrTiO$_3$ (STO) substrates via the pulsed laser deposition (PLD) method. The influence of the concentration x on the microstructure and the electrical properties of the LPNO films was investigated. The LPNO films with different concentrations x from 0 to 0.3 were fabricated under an oxygen partial pressure of 100 mTorr at a substrate temperature of 750 $^{\circ}$C and an energy density of 1.0 J/cm$^2$. The textures, morphologies and electrical properties of the LPNO films were characterized by using X-ray diffraction, atomic force microscopy (AFM), and electrical resistivity measurements. The LPNO films were shown to be c-axis oriented, and the LPNO films with x = 0.2 and 0.3 exhibited an upturns at T = 40 K and 50 K, respectively.

Keywords: Thin films, Resistivity, PLD

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