npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Physics: Sae Mulli 2017; 67: 952-957

Published online August 31, 2017 https://doi.org/10.3938/NPSM.67.952

Copyright © New Physics: Sae Mulli.

Study on the Radiation Hardness of a Monolithic Active Pixel Sensor by Using Non-ionizing Energy Loss

Kyungeon CHOI1, Jiyoung KIM2, In-Kwon YOO*3

1 Department of Physics, Indiana State University, IN 47405, U.S.A.
2 Department of Physics, Heidelberg University, 69117 Heidelberg, Germany
3 Department of Physics, Pusan National University, Busan 46241, Korea

Correspondence to:yoo@pusan.ac.kr

Received: May 15, 2017; Revised: June 23, 2017; Accepted: June 29, 2017

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The monolithic active pixel sensor (MAPS) technology is widely used for high-energy particle-collision experiments. When the serious radiation damage near the collision points in the experimental environment is considered, a study on the radiation hardness of the MAPS chip is an essential part of the chip R&D process. Especially, study on the details of the non-ionizing energy loss (NIEL) effect on the chip has not shown much progressed because the electron trap processes in the silicon pixel chips are not well known. In this research, the charge collection efficiency (CCE) was studied for various MAPS chips irradiated by neutrons of a few 10$^{13}\cdot$1 MeV n$_{\mathrm{eq}}$/cm$^2$ with $^{55}$Fe in the laboratory chip test system built in the Heavy Ion Physics Experiment (HIPEx) Laboratory of Pusan National University.

Keywords: Silicon pixel detector, CMOS imaging sensor, Non-ionizing energy loss (NIEL) effect, Pixel chip characterization, Charge collection efficiency

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