Using density functional theory calculations, we study the Schottky barrier (SB) change in a two-dimensional (2D) lateral heterostructure consisting of semiconducting 2H-MoS$_2$ and the ferromagnetic metal 2H-VS$_2$ by applying a uniaxial tensile strain from 0% to 10%. We find that the SB for holes is much smaller than that for electrons and that SB height decreases monotonically under increasing tensile strain. In particular, we find that a critical strain where the spin-up SB for holes is abruptly reduced to zero exists near a strain of 8%, implying that only the spin-up holes are allowed to flow through the MoS$_2$-VS$_2$ lateral heterostructure. Our results provide fundamental information and can be utilized to guide the design of 2D lateral heterostructure-based novel rectifying devices by using strain engineering.

Keywords: Two-dimensional materials, Schottky barrier, Tensile strain, Density functional theory