Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2018; 68: 1288-1292
Published online December 31, 2018 https://doi.org/10.3938/NPSM.68.1288
Copyright © New Physics: Sae Mulli.
Hwihyeon HWANG, Jaekwang LEE*
Department of Physics, Pusan National University, Busan 46241, Korea
This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Using density functional theory calculations, we study the Schottky barrier (SB) change in a two-dimensional (2D) lateral heterostructure consisting of semiconducting 2H-MoS$_2$ and the ferromagnetic metal 2H-VS$_2$ by applying a uniaxial tensile strain from 0% to 10%. We find that the SB for holes is much smaller than that for electrons and that SB height decreases monotonically under increasing tensile strain. In particular, we find that a critical strain where the spin-up SB for holes is abruptly reduced to zero exists near a strain of 8%, implying that only the spin-up holes are allowed to flow through the MoS$_2$-VS$_2$ lateral heterostructure. Our results provide fundamental information and can be utilized to guide the design of 2D lateral heterostructure-based novel rectifying devices by using strain engineering.
Keywords: Two-dimensional materials, Schottky barrier, Tensile strain, Density functional theory