npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2018; 68: 834-838

Published online August 31, 2018

Copyright © New Physics: Sae Mulli.

Fabrication of Microholes in Silicon Wafers by Using Wet-Chemical Etching

Ha Young LEE1, Ji-Yeon NOH1, Min Sub KWAK1, Kyung-Won LIM1, Hyung Soo AHN1, Ji-Hoon AHN1, Sam Nyung YI*1, Jungho RYU†2

1 Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
2 School of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Korea

Correspondence to:*, †

Received: April 18, 2018; Revised: July 16, 2018; Accepted: July 17, 2018

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


The presence of microholes gives materials unique physical properties through their effect on both light and matter. In particular, they can be widely used to increase the efficiency of devices such as light-emitting diodes (LEDs), organic LEDs (OLEDs), solar cells, and sensors. They also have various applications such as aiding plasmon formation on a metal surface. This work reports the quick and inexpensive formation of large amounts of microholes through wet-chemical etching. A Si(100) substrate was etched with KOH solution; the resulting holes depended on the temperature and etching duration. Reacting Si and KOH solution (20%) at 70, 80 and 90 $^\circ$C resulted in microholes. Field-emission scanning electron microscopy (FE-SEM) was used to investigate the mechanism and the rate of etching with respect to temperature and etching duration. The completed microholes can be finely adjusted through the deposition of a metal such as Au, Pt, Ag or Cu to give them properties suitable for various uses.

Keywords: Si, Wet-chemical etching, Microholes

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