npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2019; 69: 1021-1026

Published online October 31, 2019

Copyright © New Physics: Sae Mulli.

The Characteristics of RRAM Devices Manufactured Using Tantalum Oxide and Titanium Oxide

Gayoung LEE1, Jaehun JEONG1, Sukyeop CHUN1, Hongchang KIM1, Junhee PARK1, Jae-Hyeon KO2, Moongyu JANG2

1School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea

2Center of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea


Received: July 25, 2019; Revised: August 28, 2019; Accepted: August 28, 2019

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.


Neuromorphic chip is a device that can mimic the nervous system of a person's brain. A RRAM(resistive random access memory) is a non-volatile memory that can be applied in the field of neuromorphic technology. Because knowledge of the characteristics of resistance change is essential for applications as a synaptic device, in this study, metal-oxides-based RRAMs were manufactured using TiO$ _{x}$ and TaO$ _{x}$. Variations in the resistance due to the movements of oxygen vacancies were confirmed through the formation of conductive filaments. The current-voltage graph showed a definite switching behavior between low resistance and high resistance. TaO$ _{x}$-based RRAM showed better switching behavior than the TiO$ _{x}$ based RRAM due to the lower conduction-band off-set of TiO$ _{x}$. Thus, RRAM devices using TaOx could be applied to the field of neuromorphic devices by reflecting the obtained results.

Keywords: Neuromorphic, Resistive memory, TiO$ _{x}$, TaO$ _{x}$

RRAM(Resistive Random Access Memory)은 비휘발성 메모리로서 RRAM를 활용한 뉴로모픽 기술연구에 적용할 수 있다. 신경 접합부 모방소자로 활용하기 위해서는 저항 변화의 특성과 확장성이 필수적이다. 따라서, 본 연구에서는 RRAM의 금속산화물로 산화티타늄(TiO$ _{x}$)과 산화탄탈륨(TaO$ _{x}$)을 사용하여 제작하고 산소 공극의 이동으로 인한 전도성 필라멘트의 형성을 통해 저항의 변화를 확인하였다. TaO$ _{x}$ 을 이용하여 제작된 RRAM 소자가 TiO$ _{x}$을 이용하여 제작된 RRAM 소자보다 우수한 스위칭 거동을 보임을 확인하였다. 이는 TaO$ _{x}$와 Pt전극간의 전도대가 TiO$ _{x}$보다 더 근접하게 형성되기 때문이다. 이상의 결과로부터 TaO$ _{x}$를 이용한 RRAM 소자를 뉴로모픽 (Neuromorphic) 분야에 응용할 수 있을 것으로 기대된다.

Keywords: 뉴로모픽, 저항성 메모리, TiO$ _{x}$, TaO$ _{x}$

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