npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Article

Research Paper

New Phys.: Sae Mulli 2019; 69: 369-375

Published online April 30, 2019 https://doi.org/10.3938/NPSM.69.369

Copyright © New Physics: Sae Mulli.

Characterization of MgZnO films depending on the deposition power of RF sputtering system

Joonyoung CHOI,  Jinyong KIM, Hyeona KIM, Ganghyeon PARK, Giseong LEE, Younjung JO*, Chang-Duk KIM

Department of Physics, Kyungpook National University, Daegu 41566, Korea

Correspondence to:duks@knu.ac.kr

Received: December 11, 2018; Revised: January 29, 2019; Accepted: February 11, 2019

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The Dependence of the characteristics of MgZnO thin films deposited by using a RF sputtering system on the deposition power were investigated. A Mg$_{0.3}$Zn$_{0.7}$O target was used to deposit thin films at powers of 150 W, 200 W, 250 W, and 300 W. While the hexagonal (002) orientation in the X-ray diffractometry (XRD) patterns increases as the deposition power increases, the MgO (200) peak begins to appear and the MgZnO (002) peak sharply decreases at 300 W. X-ray photoelectron spectroscopy (XPS) measurements showed the binding energy of the Zn2$_{p3}$ peak to be is close to that of pure ZnO, which means an the improvement in the ZnO crystallinity with increasing deposition power. However, Hall measurements show that as the crystallinity improves, the oxygen vacancies, acting as electron donors, are reduced, as are the and electron concentration and mobility and the electrical conductivity.

Keywords: MgZnO, RF magnetron sputtering, X-ray photoelectron spectra, Oxygen vacancies

본 연구에서는 RF 스퍼터링 시스템으로 증착한 MgZnO 박막의 증착 파워에 따른 박막 형성 특성을 파악하였다. Mg$_{0.3}$Zn$_{0.7}$O 타겟을 이용하여 150 W, 200 W, 250 W, 300 W의 파워로 박막을 제작하였다. XRD 결과에서 증착 파워가 올라갈수록 MgZnO의 hexagonal (002) 방향 결정성이 높아지는 반면, 300 W에서는 MgO (200) 결정성이 나타나기 시작하면서 MgZnO (002) 결정성은 급격히 축소되었다. 또한 250 W까지 증착 파워가 증가할수록 Zn2$_{p3}$의 결합 에너지가 pure ZnO의 결합에너지에 근접하였고, 이는 증착 파워 증가에 따라 ZnO 결정성이 좋아짐을 의미한다. 하지만 결정성이 좋아지면서 전자를 내놓을 산소 공공(oxygen vacancies)이 감소하여 전자 농도, 이동도(Mobility)와 전기전도도의 감소로 이어지는 것을 홀 측정으로 확인하였다.

Keywords: MgZnO, RF 마그네트론 스퍼터링, X선 광전자 분광법, 산소 공공

Figures

Fig. 1. SEM image of MgZnO thin films deposited on Si substrates with different RF power at (a) 150 W, (b) 200 W, (c) 250 W, (d) 300 W.

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