npsm 새물리 New Physics : Sae Mulli

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Research Paper

New Phys.: Sae Mulli 2019; 69: 612-616

Published online June 28, 2019 https://doi.org/10.3938/NPSM.69.612

Copyright © New Physics: Sae Mulli.

Comparison of the Electrical Characteristics of a Resistive Random Access Memory (RRAM) Device According to the Type of Metal Oxide

Hong Chang KIM1, SukYeop CHUN1, GaYeong KIM1, JaeHun JEONG1, YeongSoo HA1, JinWoo PARK1, JuneHee PARK1, MoonGyu JANG2*

1School of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea

2Research Institution of Nano Convergence Technology, Hallym University, Chuncheon 24252, Korea

Correspondence to:jangmg@hallym.ac.kr

Received: March 21, 2019; Revised: April 30, 2019; Accepted: May 2, 2019

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A simulation was carried out to analyze the characteristics of a resistive random access memory (RRAM) device having a metal-insulator-metal (MIM) pattern and the results were compared with the experimental data. In the study, HfO$_2$, TiO$_2$, and Ta$_2$O$_5$ were commonly used as an insulator, and platinum was used as an electrode to form the RRAM device. The variations in the current characteristics of each RRAM device with variables such as the thickness of the insulator, the trap concentration, and the trap depth through the constructed device were compared. In summary, we could see that the thinner the insulator was, the smaller the transition voltage was, and the greater the current density was. Thus, we could deduce that the resistance had decreased. In addition, when comparing the three materials used as the insulator, we were able to verify that Ta$_2$O$_5$ had better properties than the other materials.

Keywords: RRAM, HfO2, TiO2, Ta2O5, Current Density

금속-절연막-금속(MIM)의 패턴을 가지는 저항 메모리(RRAM) 소자 특성 분석을 위한 시뮬레이션을 진행하였으며 실험결과와 비교하였다. 본 연구에서는 보편적으로 RRAM 소자 연구에 사용되는 HfO$_2$, TiO$_2$와 Ta$_2$O$_5$를 절연막으로 하였고 백금을 전극으로 하여 RRAM 소자를 형성시켰다. 형성된 소자를 통해 절연막의 두께, 트랩의 수 그리고 트랩의 깊이 등을 변수로 하여 각 RRAM 소자의 전류 특성을 비교하였다. 시뮬레이션 결과, 절연막의 두께가 얇아질수록 전이 전압(Transition Voltage)은 작아지고 전류 밀도는 커졌으며 저항이 감소함을 알 수 있었다. 또한, 절연막으로써 사용되는 세 물질을 비교하였을 때, Ta$_2$O$_5$가 다른 물질보다 보다 더 좋은 특성을 가짐을 확인 할 수 있었다.

Keywords: RRAM, HfO<sub>2</sub>, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>,&nbsp;전류밀도

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