npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041


Research Paper

New Phys.: Sae Mulli 2020; 70: 103-106

Published online January 31, 2020

Copyright © New Physics: Sae Mulli.

Study of Nitrogen Plasma Treatment on Indium Tin Oxide Thin Films

Ji-Won JANG1, Hyeok JEE1, Hye-Won SEO1*

Department of Physics, Jeju National University, Jeju 63243, Korea


Received: September 16, 2019; Revised: November 7, 2019; Accepted: November 8, 2019

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License ( which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

We studied the effect of nitrogen plasma treatment on the indium-tin-oxide thin films. By monitoring the in-situ optical emission spectra during the capacitively coupled plasma treatments, we investigated the populations and the energies of the nitrogen plasma species. In particular, the nitrogen plasma consisting of excited neutral and ionic molecular species was studied and found to depend on the nitrogen flow. After the nitrogen plasma treatment, the optical band gap of the indium-tin -oxide thin films was reduced, and their resistance was increased. Interestingly, when the energy of the excited neutral molecular series became higher, the band tails increased but the sheet resistance was suppressed. We believe that co-generations of nitrogen doping species and oxygen vacancies by an energetic plasma were responsible for these results.

Keywords: Indium tin oxide, Plasma treatment, Capacitively coupled plasma, Plasma optical emission spectroscopy

Fig. 1. (a-d) Top view of SEM images of the N plasma treated ITO films; (a) N$ _{2}$ flow of 10 sccm, (b) 20 sccm, (c) 40 sccm, (d) 60 sccm.

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