npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
Qrcode

Article

Research Paper

New Phys.: Sae Mulli 2020; 70: 119-124

Published online February 28, 2020 https://doi.org/10.3938/NPSM.70.119

Copyright © New Physics: Sae Mulli.

Effect of an Organic Additive, N-Dimethyldithiocarbamic acid Ester Sodium salt, on Properties of Bismuth Telluride thin Films Fabricated by Galvanic Displacement Reaction of Electroplated Cobalt thin Films

Jihyun KIM, Jeongsub LEE, Kimin HONG*

Department of Physics, Chungnam National University, Daejeon 34134, Korea

Correspondence to:kmhong@cnu.ac.kr

Received: November 14, 2019; Revised: January 21, 2020; Accepted: January 21, 2020

This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0/) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We electroplated cobalt thin films and separated them from the electrodes. The cobalt thin films were converted to bismuth- telluride films by using a galvanic displacement reaction. The bismuth-telluride films obtained from the cobalt exhibited significant differences in morphology and electrical resistivity. The bismuth-telluride films fabricated from cobalt plated with a pure electrolyte had a polycrystalline amorphous structure and low resistivity. However, the bismuth-telluride films fabricated from cobalt plated with an additive showed significantly large resistivities. The increase in the resistivity can be attributed to the changes in the crystalline structure, which is caused by the additive during the electroplating process.

Keywords: Cobalt thin film, Bismuth-telluride film, Electroplating, Electrical resistivity, Grain size

전기도금 방법으로 코발트 박막을 제작하고 이를 작용전극에서 분리한 후 갈바니 치환반응을 이용하여 비스무트 텔루라이드로 변환하였다. 순수한 전해액으로 도금한 코발트와 전기도금 전해액에 미량의 유기첨가제를 가하여 도금한 코발트를 치환하여 얻은 비스무트 텔루라이드로는 결정구조와 비저항이 대단히 상이한 특성을 나타낸다. 순수한 전해액으로 도금한 코발트를 치환하여 얻은 BiTe 박막은 비정질 다결정 구조를 나타내고 낮은 비저항을 보인다. 그러나 유기첨가제를 가하여 도금한 코발트를 치환하여 얻은 비스무트 텔루라이드는 대단히 높은 비저항값을 보인다. 이러한 비저항의 증가는 코발트 전기도금 과정에서 첨가한 유기첨가제가 코발트와 치환되는 비스무트 텔루라이드의 결정구조에 미치는 영향에 의한 것으로 보인다.

Keywords: 코발트 박막, 비스무트 텔루라이드 박막, 전기도금, 비저항, 입도

Figures

Fig. 1. Surface morphology of the BiTe thin films obtained by GDR of 30 minutes from cobalt thin films plated with DPS; (a) 0 mL/L, (b) 1 mL/L, (c) 2 mL/L, (d) 5 mL/L, (e) 7 mL/L.

Stats or Metrics

Share this article on :

Related articles in NPSM