npsm 새물리 New Physics : Sae Mulli

pISSN 0374-4914 eISSN 2289-0041
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Research Paper

New Phys.: Sae Mulli 2020; 70: 738-744

Published online September 29, 2020 https://doi.org/10.3938/NPSM.70.738

Copyright © New Physics: Sae Mulli.

Growth Mechanism and Characterization of AlN Microspheres by HVPE Method

Kyoung Hwa KIM1, Jung Hyun PARK1, Hyung Soo AHN*1, Min YANG2, Sam Nyung YI2, Injun JEON3, Chae Ryong CHO3, Hunsoo JEON4

1Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

2Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University, Busan 4624, Korea
3Power Semiconductor Commercialization Center, Busan Techno Park, Busan 46239, Korea
4Department of Physics, Andong National University, Andong 36729, Korea

Correspondence to:ahnhs@kmou.ac.kr

Received: May 27, 2020; Revised: July 21, 2020; Accepted: July 22, 2020

Abstract

An AlN microsphere was grown by using a mixed-source hydride vapor phase epitaxy (HVPE) method a reactor and combining the source with the growth regions and a graphite boat prefilled with the mixed source (Ga+Al) in the source region. The custom-designed reactor was designed to minimize reactions between quartz and AlCl vapor species and to reduce the response distance for synthesis for neighboring source and growth zones at a high source-zone temperature of 1150$^{\circ}$C. Field-emission scanning electron microscopy (FE;SEM), electron-energy dispersive spectroscopy (EDS), and field-emission transmission electron microscopy (FE;TEM) were used in order to investigate the characteristics of the AlN microsphere. We discuss the role of Ga in the mixed source in the AlN microsphere growth process and the results of an investigation of the growth mechanism of the AlN microsphere.

Keywords: AlN microspheres, Mixed-source HVPE, micro-puddles, Cubic AlN

Ga과 Al의 혼합소스로 채워진 흑연 보트와 성장 영역과 소스 영역을 결합하는 반응관을 사용한 혼합 소스 수소화물 기상 에피택시 (hydride vapor phase epitaxy, HVPE) 방법에 의해 마이크로 AlN 구를 성장시켰다. 고안된 반응관은 1150 $^{\circ}$C의 고온에서 소스 영역과 성장 영역을 이웃시킴으로써 합성을 위한 반응 거리를 줄이고, 석영과 AlCl 기체 사이의 반응을 최소화하기 위해 설계하였다. 마이크로 AlN 구의 특성은 주사 전자 현미경 (FE-SEM), X선 회절 스펙트럼 그리고 라만 스펙트럼과 전계방사형 투과전자현미경 (FE-TEM)을 이용하여 분석하였다. 마이크로 AlN 구의 성장 과정에서 혼합 소스 내 Ga의 역할을 조사하였으며, 마이크로 AlN 구의 성장 원리를 제안하였다.

Keywords: 마이크로 AlN 구, 혼합 소스 수소 화물 기상법, 마이크로 웅덩이, 큐빅 AlN

Figures

Fig. 1. FE-SEM images of AlN microspheres grown by mixed-source HVPE method : (a) 530 $\upmu$m-diameter AlN microsphere, (b) AlN microsphere surface, (c) magnified FE-SEM image of AlN microsphere surface, (d) surface protrusions of 0.7 -- 0.95 $\upmu$m, (e) surface protrusions of cubic shape, (f) cross-sectional FE-SEM image of AlN microsphere, (g) EDS line scan of AlN microsphere, and (h) EDS line scan result of AlN microspheres for the elemental C, N, O, Al, Si, Cl.

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