Ex) Article Title, Author, Keywords
New Phys.: Sae Mulli 2021; 71: 347-352
Published online April 30, 2021 https://doi.org/10.3938/NPSM.71.347
Copyright © New Physics: Sae Mulli.
Department of Physics, Pukyong National University, Busan 48513, Korea
In the layer-structured Bi-Sb-Te (BST) pnictogen chalcogenide film grown on a Al$_2$O$_3$ substrate by using spontaneous van der Waals epitaxy, a structurally correlated in-plane orientation between the 2D BST film and the 3D substrate was found. In order to elucidate the origin of such a peculiar structural feature, we confirmed that well-matched stacking at the van der Waals hetero-interface could be induced by the similar atomic arrangements and surface topographies of Te monolayers. Particularly, the $c-$axis lattice parameter of the BST film was individually manipulated by altering the growth rate of spontaneous van der Waals epitaxy. We found that such a change could be generated by variations in the van der Waals interfaces between BST quintets in a layer-structured pnictogen chalcogenide.
Keywords: Spontaneous van der Waals epitaxy, Thin film, Chalcogenide, Pulsed laser deposition, Van der Waals interface