New Physics: Sae Mulli

Aims and Scope

The origin of New Physics: Sae Mulli (NPSM, ISO abbreviation: New Phys.: Sae Mulli.): Sae Mulli (새물리 in Korean characters means ‘new physics’) is the oldest Korean pure scientific journal. It was first published in 1961 just after the Korean War by the Korean Physical Society (KPS). The primary mission of Sae Mulli was to start building up Korean physics research community from almost nothing and in fact Sae Mulli had made tremendous contributions to the Korean science community. Through a peer-review system, Sae Mulli had continued elevating the level of scientific researches, consequently becoming a cornerstone of the economic miracle of Korea...

Editor-in-Chief : Sunglae CHO
New Physics: Sae Mulli Editorial Board

pISSN : 0374-4914
eISSN : 2289-0041

Tel : +82-2-556-4737
Fax : +82-2-554-1643
E-mail: npsm@npsm-kps.org

Research Papers

Horizontally Grown Tin-doped Indium-Oxide Nanowires

Jinjoo JUNG, Do-Hyung KIM*

Nano Applied Physics Laboratory (NAPL), Department of Physics, Kyungpook National University, Daegu 41566, Korea

Controlling the growth of nanowires and assembling them on planar substrates is of enormous importance for nanoscale device applications using the bottom-up approach. The tin-doped indium-oxide (ITO) nanowires were grown via direct thermal-chemical vapor deposition without the use of a pre-deposited catalyst. Growth was initiated by the formation of a Sn droplet that acted as a catalyst for ITO nanowire growth. With increasing growth time, the ITO nanowires grew horizontally in the early stages and then showed a horizontal-to-vertical growth mode transition. By reducing the rate of growth, we were able to obtain horizontally grown ITO nanowires without vertically grown ones. This is due to the horizontal growth period being increased by extending the transition time to vertical growth by reducing the growth rate. These results not only give important implications for the horizontal growth of other nanowires, but also point to potential applications in nanowire devices.

New Phys.: Sae Mulli 2020; 70: 143-147

Effect of an Organic Additive, N-Dimethyldithiocarbamic acid Ester Sodium salt, on Properties of Bismuth Telluride thin Films Fabricated by Galvanic Displacement Reaction of Electroplated Cobalt thin Films

Jihyun KIM, Jeongsub LEE, Kimin HONG*

Department of Physics, Chungnam National University, Daejeon 34134, Korea

We electroplated cobalt thin films and separated them from the electrodes. The cobalt thin films were converted to bismuth- telluride films by using a galvanic displacement reaction. The bismuth-telluride films obtained from the cobalt exhibited significant differences in morphology and electrical resistivity. The bismuth-telluride films fabricated from cobalt plated with a pure electrolyte had a polycrystalline amorphous structure and low resistivity. However, the bismuth-telluride films fabricated from cobalt plated with an additive showed significantly large resistivities. The increase in the resistivity can be attributed to the changes in the crystalline structure, which is caused by the additive during the electroplating process.

New Phys.: Sae Mulli 2020; 70: 119-124